Night lettersthird grade reading streets. This theme is centered on devices that exploit ferroelectric polarization as a state variable and reveal polarization controlled electron and spin tunneling and metal-insulator transitions. The goal is to develop a ferroelectric tunnel junction (FTJ) exhibiting switchable tunneling resistance with resistance ratios exceeding 103 at room temperature. This theme also develops a ferroelectric field effect transistor (FET) with a programmable Schottky barrier, based on polarization induced metal-insulator transition in correlated oxide materials.

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Field Effect Transistor Pdf

1. We demonstrate room-temperature ferroelectric field-effect transistors (Fe-FETs) with MoS 2 and CuInP 2 S 6 two-dimensional (2D) van der Waals heterostructure. The ferroelectric CuInP 2 S 6 is a 2D ferroelectric insulator, integrated on top of MoS 2 channel providing a 2D/2D semiconductor/insulator interface without dangling bonds.
2. Flexible ferroelectric field effect transistors (FeFETs) with multiple functionalities and tunable properties are attractive for low power sensing, nonvolatile data storage, as well as emerging memristor applications such as artificial synapses, though the state‐of‐art flexible FeFETs based on organic materials possess low polarization, large coercivity, and high operating voltage,.
3. Ferroelectric field-effect transistors (FeFETs) with semiconductors as the channel material and ferroelectrics as the gate insulator are attractive and/or promising devices for application in nonvolatile memory.

Nonvolatile Ferroelectric Field-effect Transistors

Vermeers paint brushes genshin impact. Ferroelectric field effect transistors (FeFETs) based on lead zirconate titanate (PZT) ferroelectric material and amorphous-indium-gallium-zinc oxide (a-IGZO) were developed and characterized. The PZT material was processed by a sol-gel method and then used as ferroelectric gate. The a-IGZO thin films, having the role of channel semiconductor, were deposited by radio-frequency magnetron.